1 p4c422 features high speed (equal access and cycle times) C 10/12/15/20/25/35 ns (commercial) C 15/20/25 /35 ns (military) cmos for low power C 495 mw max. C 10/12/15/20/25 (commercial) C 495 mw max. C 15/20/25/35 (military) description the p4c422 is a 1,024-bit high-speed (10ns) static ram with a 256 x 4 organization. the memory requires no clocks or refreshing and has equal access and cycle times. inputs and outputs are fully ttl compatible. operation is from a single 5 volt supply. easy memory expansion is provided by an active low chip select one ( cs 1 ) and active high chip select two (cs 2 ) as well as 3- state outputs. p4c422 ultra high speed 256 x 4 static cmos ram means quality, service and speed 1q97 functional block diagram pin configurations in addition to very high performance and very high den- sity, the device features latch-up protection, single event and upset protection. the p4c422 is offered in several packages: 22-pin 400 mil dip (plastic and ceramic), 24- pin 300 mil soic, 24-pin lcc and 24-pin cerpack. devices are offered in both commercial and military temperature ranges. column decoder sense amps 32 x 32 array cs 1 cs 2 we oe o 0 o 1 o 2 o 3 a 5 a 6 a 7 a 2 a 3 a 4 a 1 a 0 d 1 d 2 d 3 d 0 data input control row decoder single 5v 10% power supply separate i/o fully ttl compatible inputs and outputs resistant to single event upset and latchup result ing from advanced process and design improvements standard 22-pin 400 mil dip, 24-pin 300 mil soic, 24-pin lcc package and 24-pin cerpack package 21 17 20 19 18 16 4 5 6 7 8 9 31 2 242322 15 14 13 12 11 10 a 1 a 2 a 3 a 4 v cc a 0 a 5 a 6 a 7 gnd nc d 0 d 1 d 2 o 1 o 0 cs 2 d 3 o 3 index we o 2 cs 1 oe nc 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 a 5 gnd a 3 a 2 a 1 a 0 a 6 a 7 d 0 o 0 d 1 we cs 2 o 3 v cc oe d 3 o 2 d 2 o 1 a 4 cs 1 1 2 3 4 5 6 7 8 9 10 11 a 5 gnd a 3 a 2 a 1 a 0 a 6 a 7 d 0 o 0 d 1 we cs 2 o 3 v cc oe d 3 o 2 d 2 o 1 a 4 cs 1 12 22 21 20 19 18 17 16 15 14 13 23 24 nc nc soic (s4) cerpack (f3) similar top view dip (p3-1, d3-1) top view lcc (l4) top view
2 p4c422 grade (2) ambient temp gnd vcc commercial 0 c to 70 c 0v 5.0v 10% military C55 c to 125 c 0v 5.0v 10% dc electrical characteristics over recommended operating temperature and supply voltage (2) p4c422 min max v oh output high voltage i oh = C5.2 ma, v cc = min. 2.4 v v ol output low voltage i ol = +8 ma, v cc = min. 0.4 v v ih input high voltage 2.1 v v il input low voltage 0.8 v v cl input clamp diode voltage i in = C10 ma C1.5 v i ix input load current gnd v in v cc C10 10 m a i oz output current (high z) v ol v out v oh , output disabled C10 10 m a i os output short circuit v cc = max., v out = gnd 90 ma current (3) symbol parameter test conditions unit symbol parameter conditions typ. unit c in input capacitance v in = 0v 5 pf c out output capacitance v out = 0v 7 pf capacitances (4) (v cc = 5.0v, t a = 25 c, f = 1.0mhz) recommended operating conditions symbol parameter value unit t bias temperature under C 55 to +125 c bias t stg storage temperature C 65 to +150 c i out dc output current 20 ma maximum ratings (1) symbol parameter value unit v cc power supply pin with C 0.5 to +7 v respect to gnd terminal voltage with C 0.5 to v term respect to gnd v cc +0.5 v (up to 7.0v) t a operating temperature C 55 to +125 c notes: 1. stresses greater than those listed under maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to maximum rating conditions for extended periods may affect reliability. 2. extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. for test purposes, not more than one output at a time should be shorted. short circuit test duration should not exceed 30 seconds. 4. this parameter is sampled and not 100% tested. 5. transition time is 3ns for 10, 12, and 15 ns products and 5ns for 20, 25, and 35 ns products, see fig 1d. timing is referenced at input and output levels of 1.5v. the output loading is equivalent to the specified i ol /i oh with a load capacitance of 15 pf (10, 12) or 30 pf (15, 20, 25, 35) as in fig. 1a and 1b respectively. 6. transition time is 3ns for 10, 12, and 15 ns products and 5ns for 20, 25, and 35 ns products, see fig 1d. transition is measured at steady state high level -500mv or steady state low level +500mv on the output from a level on the input with load shown in fig. 1c. 7. t w is measured at t wsa = min.: t wsa is measured at t w = min. power dissipation characteristics vs. speed symbol i cc parameter dynamic operating current temperature range commercial military -10 90 n/a -12 90 n/a -15 90 90 -20 90 90 -25 65 90 -35 65 90 unit ma ma
3 p4c422 minimum write recovery times by eliminating the write recovery glitch. reading is performed with chip selct one ( cs 1 ) low, chip select two (cs 2 ) high, write enable ( we ) high and output enable ( oe ) low. the informa- tion stored in the addressed word is read out on the noninverting outputs (o 0 through o 3 ). the outputs of the memory go to an inactive high impedance state whenever chip select one ( cs 1 ) is high, or during the write operation when write enable ( we ) is low. an active low write enable ( we ) controls the writing/ reading operation of the memory. when the chip select one ( cs 1 ) and the write enable ( we ) are low and the chip select two (cs 2 ) is high, the information on data inputs (d 0 through d 3 ) is written into the addressed memory word and preconditions the output circuitry so that true data is present at the outputs when the write cycle is complete. this preconditioning operation insures functional description truth table ac electrical characteristicsread cycle (v cc = 5v 10% except as noted, all temperature ranges) (2) mode cs 2 cs cs cs cs cs 1 we we we we we oe oe oe oe oe output standby l x x x high z standby x h x x high z d out disabled h l x h high z read h l h l d out write h l l x high z timing waveform of read cycle notes: h = high l = low x = don't care high z = implies outputs are disabled or off. this condition is defined as high impedance state for the p4c422. sym. t rc t acs t zrcs t aos t zros t aa read cycle time (5) chip select time (5) chip select to high-z (6) output enable time output enable to high-z (6) address access time (5) -10* min max 7.5 8 7.5 8 10 -12 min 12 max 8 10 8 10 12 -15 min 15 max 8 12 8 12 15 -20 min 20 max 12 15 12 15 20 -25 min 25 max 15 20 15 20 -35 min 35 max unit ns ns ns ns ns ns 25 *v cc = 5v 5% 25 30 25 30 35 parameter 12 address t rc t aa t acs t aos t zros t zrcs data valid cs 1 cs 2 oe we data a 0 ? 7 o 0 ? 3 outputs
4 p4c422 max ac characteristicswrite cycle (v cc = 5v 10% except as noted, all temperature ranges) (2) timing waveform of write cycle parameter write cycle time (5) write enable to high-z (6) write recovery time write pulse width (5,7) data setup time prior to write (5) data hold time (5) address setup time (5,7) address hold time (5) chip select setup time (5) chip select hold time (5) sym. t wc t zws t wr t w t wsd t whd t wsa t wha t wscs t whcs -10* -12 -15 -20 -25 -35 unit min max min max min max min min max min max 10 8 0 2 8 8 12 9 0 10 10 15 11 0 2 12 12 20 13 2 15 15 25 15 5 20 20 35 20 5 30 25 ns ns ns ns ns *v cc = 5v 5% 225 55ns 00 0 25 5 ns 22 4 55 5 ns 0 00255ns 22 5 5 5ns t wr t zws t whcs t whd t wsd t wsa t wscs t wc cs 1 cs 2 we address o 0 ? 3 data in d 0 ? 3 a 0 ? 7 t w t wha data outputs
5 p4c422 d out 224 w 470 w +5 15 pf vth= 1.62 v th d out 152 w thevenin equivalent d out 224 w 470 w +5 30 pf d out 224 w 470 w +5 5 pf figure 1c figure 1d figure 1a figure 1b ac test loads & waveforms 90% 10% 90% 10% 3.0 v gnd note (5) note (5)
6 p4c422 *military temperature range with mil-std-883, class b compliance. n/a = not available 25 20 -15dmb -15lmb -15fmb selection guide the p4c422 is available in the following temperature range, speed, and package options. temperature range package commercial temperature plastic dip soic cerdip lcc cerpack cerdip lcc cerpack military temperature military pro- cessed* speed (ns) 10 -10pc -10sc n/a n/a n/a n/a n/a n/a 12 15 -12pc -12sc -15pc -15sc -20pc -20sc -25pc -25sc n/a n/a n/a n/a n/a n/a -15dm -15lm -15fm -20dm -20lm -20fm -25dm -25lm -25fm -20dmb -20lmb -20fmb -25dmb -25lmb -25fmb ordering information device type package processing p4c422 xx xx speed 10,12,15, 25, 35 ns commercial 15,20,25, 35 ns military 256 x 4 sram c 0 c to +70 c m -55?c to +125?c mb mil-std-883, class b d cerdip (400 mil) l ceramic lcc (400 mil square) p plastic dip (400 mil) s plastic soic (300 mil) f cerpack the p4c422 is also available as smd number: 5962-88594 35 -35pc -35sc -35dm -35lm -35fm -35dmb -35lmb -35fmb
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